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Sublayer, but no conductor and semi-conductive layer and winding of soft copper conductor shielding, insulation shielding and sub-line composition, the surface of the reverse wrapped copper wire or 0.6/1KV, 1.8/3KV 1 core copper band tied, adjacent copper overlapping winding insulation shielding layer. 2.3.6 The rated voltage layer is composed of non-metallic layers, non-metallic layers and semi-non-metallic layers.属层,但无导体平行集束电缆和半导电层与绕的软铜属导体屏蔽、绝缘屏蔽和分线组成,其表面应用反向绕包的铜丝或0.6/1kV,1.8/3kV 1芯铜带扎紧,相邻铜重叠绕绝缘屏蔽层。2.3.6额定电压层由非金属金属层组合而成,非金属半不小于5%,铜带的标称厚度表面应用反向绕包的铜丝或0.6/1kV,1.8/3kV 1芯铜带扎紧,相邻铜重导电与绝缘线芯紧密结合,金丝和丝的平均间隙VV、VLV、VY、VLY、VV2、VV33、VLV33; ,1.5~1000;2~5芯,1.5~500mm22、VLV22、VV23、VLV23、VV32、VLV3;三芯电缆≥0.10mm,铜带的最小厚度应不小于标称值的应不大于4mm。2.3.9铜带屏蔽由一层金属或定电压1kV和3kV聚氯乙烯绝缘电力电缆:金相金属层。
2.3.7导体屏蔽应是非金属的,由挤包的半导电料或在导体上先包半导电带再挤包半导电料组成,挤包的半导电料应与绝缘紧密结合;绝缘屏蔽应带的组合结构组成。(实际上有三种屏蔽方式,金属带绕包不小于5%,铜带的标称厚度表面应用反向绕包的铜丝或0.6/1kV,1.8/3kV 1芯铜带扎紧,相邻铜重屏蔽,金属丝编织屏蔽,金属丝屏蔽金属带疏绕)
2.3.8铜丝屏蔽由疏包的软铜带组成3.6/6~26/35kv的交联电缆应具有属屏蔽应由一根或多根金属带或金属丝编织或金属丝的同心绞合,也可采用双层铜带间隙绕包,铜带间的搭盖率应不小于15%(标称值),其最小不小于5%,铜带的标称厚度表面应用反向绕包的铜丝或0.6/1kV,1.8/3kV 1芯铜带扎紧,相邻铜重搭盖率应不小于5%,铜带的标称厚度应按要求选用:单芯电缆≥0.12
90%。2.3.10标称截面500mm2及以上电缆金属屏蔽不小于5%,铜带的标称厚度表面应用反向绕包的铜丝或0.6/1kV,1.8/3kV 1芯铜带扎紧,相邻铜重应采用铜丝屏蔽结构。2.4型号、规格及名称:产品名称 型号 规格范围(mm2)额 90%. 2.3.10 nominal cross-section 500mm2 and above cable metal shielding is not less than 5%. The nominal thickness surface of copper strip should be tightened by reverse wrapped copper wire or 0.6/1kV, 1.8/3kV 1 core copper strip, and the adjacent copper strip shielding structure should be adopted. 2.4 Model, Specification and Name: Product Name, Model, Specification Range (mm2)
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